In-Depth Analysis of SiC Device Applications in New Energy Vehicles

As a core representative of third-generation semiconductor materials, silicon carbide (SiC) is reshaping the technological landscape of power electronic systems for new energy vehicles. This report provides a systematic analysis from multiple dimensions including technical characteristics, application scenarios, market size, industrial chain, and investment opportunities.

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Compared with traditional silicon-based IGBTs, SiC materials have significant advantages in key parameters such as bandgap, thermal conductivity, and breakdown electric field strength [1]:

Performance Indicator	Silicon (Si)	Silicon Carbide (SiC)	Advantage Multiplier
Bandgap	1.1 eV	3.2 eV	~3x
Thermal Conductivity	1.5 W/cm·K	4.9 W/cm·K	~3x
Breakdown Electric Field	0.3 MV/cm	3.0 MV/cm	~10x
Electron Saturation Velocity	1.0×10⁷ cm/s	2.0×10⁷ cm/s	~2x

SiC devices demonstrate four core advantages in new energy vehicle applications [2][3]:

• Reduces switching losses by over 50%
• For vehicles equipped with SiC electronic control systems, driving range is directly increased by 10%-20%
• Reduces overall vehicle energy consumption by approximately 5%-10%

• Its high voltage withstand characteristic (1200V-1700V) perfectly adapts to 800V or even 1000V high-voltage architectures
• Lays the foundation for ultra-fast charging technology, enabling “5 minutes of charging for 200 kilometers of range”

• Compared with increasing battery energy density (every 1% increase in energy density leads to a 5%-8% cost rise), SiC technology can drive greater energy efficiency improvements at a lower cost
• Reduces system volume by 30%-50% and increases power density by 3-5 times

• High-temperature operation capability (junction temperature can reach above 200℃)
• Reduces the need for cooling systems and lowers system complexity

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The main application scenarios of SiC devices in new energy vehicles include three core systems [1][2]:

The main drive inverter is the largest application market for SiC devices, responsible for converting battery DC power to AC power to drive the motor. Compared with IGBTs, SiC MOSFETs have faster switching speeds and lower on-resistance, significantly improving the efficiency of electric drive systems.

• Typical Case
  : After Tesla Model 3 adopted SiC electronic control, its driving range increased by 15%, and fast charging power was upgraded to 250kW [2]
• Technical Requirements
  : Must meet AEC-Q100 automotive-grade certification, with high temperature resistance, electromagnetic interference resistance, and long service life (over 15 years)

The OBC is responsible for converting external AC power to the DC power required by the battery. The high-frequency characteristics of SiC devices can reduce OBC volume by over 30% and increase efficiency to over 96%.

Converts high-voltage battery power to 12V low-voltage power for in-vehicle electronic devices. SiC devices can achieve higher conversion efficiency and smaller system size.

In 800V high-voltage platforms, SiC devices are used for switching and protection in high-voltage power distribution circuits.

[1]:

• Pure electric vehicles priced above RMB 200,000 (800V architecture will be basically popularized in 2025)
• Extended-range electric vehicles with 60kWh+ battery capacity (basically equipped with 800V architecture)

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According to industry data forecasts, the SiC power device market is showing a high-growth trend [3][4]:

Year	Market Size (USD 100 Million)	YoY Growth	Automotive-Grade Share
2024	~25	-	~65%
2025	~30	~20%	~68%
2026	~35	~17%	~70%
2030	~100+	~25%	~71%

It is predicted that by 2030, the automotive and mobility sector will account for 71% of the SiC market [4].

• 2025
  : The penetration rate of 800V+SiC solutions in complete vehicles exceeds 15%
• 2026
  : Predicted installation rate exceeds 50%
• 2030
  : The driving range of new energy vehicles is expected to exceed 1,000 kilometers, with semiconductor technology contributing over 40% [2]

• Global carbon neutrality goals drive the increase in new energy vehicle penetration
• Strict energy efficiency standards in various countries

• Mass production of 8-inch SiC wafers is accelerating, with costs reduced by approximately 30% [3]
• Device yield continues to improve

• Consumers’ demand for fast charging experience is increasingly strong
• 800V high-voltage platforms have become a mainstream trend

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The industrial chain of SiC power devices can be divided into three major links: upstream materials, midstream manufacturing, and downstream applications [2]:

are the core link of the industrial chain, accounting for 40%-50% of the total device cost.

[1]:

• The global 6-inch substrate market is experiencing fierce price wars and industry reshuffling
• Chinese manufacturers such as TankeBlue Semiconductors, SICC (Shandong Yueda Advanced Materials) are rapidly increasing their market share relying on cost and production capacity advantages
• The performance of international giants such as Wolfspeed, Rohm, and SK Siltron has deteriorated
• The trend of domestic substitution is very obvious

:

• Jingsheng Mechanical & Electrical, Wolfspeed have made breakthroughs in 12-inch silicon carbide technology [5]
• HANTEST Semiconductor released the world’s first 12-inch SiC epitaxial wafer [5]
• CRRC Zhuzhou’s 8-inch SiC wafer production line is connected, adding an annual production capacity of 360,000 wafers [6]

:

• Must pass AEC-Q100 automotive-grade certification
• Mass production yield directly determines cost levels
• Trench structure, double-trench design continue to evolve

[2][6]:

• StarPower Semiconductor, BYD Semiconductor have achieved mass production and installation of automotive-grade SiC devices
• BYD Semiconductor released the world’s first 1500V automotive-grade SiC chip, which has been applied in batch installations [6]
• CRRC Zhuzhou’s 4th generation trench-gate SiC MOSFET has been finalized

[2]:

• Leading Automakers
  : Choose independent chip development to achieve in-depth technology binding (e.g., BYD, Tesla)
• Most Automakers
  : Adopt the “customized outsourcing” model, jointly developing with semiconductor enterprises

:

• XPeng G9 is equipped with an 800V high-voltage SiC platform, charging 300 kilometers of range in 15 minutes [2]
• Xiaomi SU7 is fully equipped with a silicon carbide high-voltage platform as standard [5]

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Enterprise	Technical Advantages	Market Position
Infineon	CoolSiC™ MOSFET G2 Series, 200mm wafer technology	Leader in the high-end market
STMicroelectronics	Automotive-grade SiC modules, vertical integration capability	Global first-tier player
ON Semiconductor	SiC MOSFETs, comprehensive solutions	Leading market share
Rohm	Trench-structured SiC MOSFETs	Key player in the high-end market
Wolfspeed	Pioneer in SiC materials, 8-inch wafers	Restructured after financial distress [1][3]

[1]:

• Renesas has exited the SiC business, shrinking its IDM strategy to focus on core product lines
• Fuji Electric and Bosch jointly develop standardized SiC modules [5]
• The bankruptcy of Wolfspeed and JS Foundry exposes structural contradictions in the overseas industry

Enterprise	Business Highlights	Market Position
BYD Semiconductor	1500V automotive-grade SiC chips, vertical integration	Domestic leader in automotive-grade SiC
StarPower Semiconductor	Automotive-grade SiC modules, RMB 1.5 billion convertible bonds to expand capacity	Key supplier
San’an Optoelectronics	Mass production of 8-inch SiC substrates, GaN layout	Leading material enterprise
TankeBlue Semiconductors	SiC substrates, production capacity advantages	Leading substrate manufacturer
SICC (Shandong Yueda Advanced Materials)	Domestic substitution of SiC substrates	Key supplier
CorePower Semiconductor, CoreLink Integrated	Automotive-grade SiC devices	Rapidly growing
Innoscience	GaN devices, world’s largest 8-inch GaN production base	Leader in the GaN field

[1][3]:

• China’s advanced electric vehicles are iterating around 800V systems, and the market share of domestic device manufacturers is rapidly increasing
• Demand from independent brands drives the continuous increase in the market share of domestic SiC device enterprises in the automotive-grade market
• The industrial pattern is shifting from “dominated by Europe, America, and Japan” to “rise of Chinese enterprises”

: STMicroelectronics, BYD Semiconductor, ON Semiconductor, etc. occupy important market shares [4]

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[1][3]:

• 8-inch wafers can reduce chip unit cost by approximately 30%
• Infineon, STMicroelectronics, ON Semiconductor, etc. are actively laying out 8-inch production lines
• San’an Optoelectronics’ 8-inch SiC substrate mass production line has been put into operation
• Puts forward higher requirements for equipment and process stability

[5]:

• Jingsheng Mechanical & Electrical, Wolfspeed have made breakthroughs in 12-inch silicon carbide technology
• HANTEST Semiconductor released the world’s first 12-inch SiC epitaxial wafer

[1]:

• Trench structure (mainstream direction)
• Double-trench design
• “Trench-assisted” planar technology

:

• Lower conduction losses
• Higher reliability
• Adapt to higher voltage, higher frequency, and harsher automotive-grade environments

[6]:

• Double-sided silver sintering packaging technology
• 5nH low stray inductance
• 200℃ high-temperature operation capability
• Infineon .XT interconnection technology (service life extended by 20x)

:

• Multi-function integration (power devices + drive + control)
• Power module standardization
• Collaborative optimization of chips and systems

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• High cost of silicon carbide substrates restricts large-scale popularization [2]
• The transition from 6-inch to 8-inch wafers requires huge capital investment
• Overcapacity has intensified price wars [1]

• Insufficient automotive-grade semiconductor production capacity, with delivery cycles as long as 12-24 months [2]
• There is a gap between domestic enterprises and international giants in chip design, manufacturing processes, and other links [2]
• Long device reliability verification cycle

• Geopolitical factors affect supply chain security [1]
• Equipment supply is restricted
• Dependence on imports for key materials

• Accelerate the construction of 8-inch wafer production lines
• Improve yield and production capacity utilization
• Vertical integration of the industrial chain

• Break through core technologies such as trench structures
• Strengthen industry-university-research cooperation
• Establish an independent intellectual property system

• Build a localized supply chain
• Leading automakers independently develop chips
• Diversified supplier strategy

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• Enterprises with automotive-grade mass production capabilities
• Enterprises with leading 8-inch wafer technology
• IDM enterprises with strong vertical integration capabilities

• Substrate manufacturers
• Epitaxial wafer manufacturers
• Enterprises with 12-inch technological breakthroughs

• Enterprises with leading 800V high-voltage platform technology
• Automakers with strong independent SiC development capabilities

• Overcapacity leads to continuous price decline
• Rapid technological iteration
• Intensified market competition

• Large R&D investment, long profit cycle
• High customer concentration
• Complex supply chain management

• New energy vehicle penetration falls short of expectations
• Changes in policy support intensity
• Geopolitical impacts

Target Type	Representative Enterprises	Investment Logic
SiC Device Leaders	BYD Semiconductor, StarPower Semiconductor	Automotive-grade mass production and shipment, leading technology
SiC Material Leaders	San’an Optoelectronics, TankeBlue Semiconductors, SICC (Shandong Yueda Advanced Materials)	Domestic substitution of substrates, production capacity expansion
Power Modules	CRRC Zhuzhou, CorePower Semiconductor	Technological breakthroughs, sufficient orders
GaN Leaders	Innoscience	World’s largest 8-inch GaN production base

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1. Significant Technological Advantages
   : SiC devices are comprehensively superior to traditional IGBTs in energy efficiency, power density, thermal management, etc., and are an inevitable choice for 800V high-voltage platforms
2. Rapid Market Growth
   : The global SiC power semiconductor market for new energy vehicles will reach nearly USD 3.5 billion in 2026, and is expected to exceed USD 10 billion in 2030
3. Accelerated Domestic Substitution
   : Chinese enterprises are rapidly rising in the substrate and device links, and the market pattern is shifting from “dominated by Europe, America, and Japan” to “rise of Chinese enterprises”
4. Continuous Technological Evolution
   : Mass production of 8-inch wafers, trench-structured devices, and advanced packaging technologies drive cost reduction and performance improvement

:

• Rapid increase in the penetration rate of 800V+SiC solutions
• 8-inch wafers become mainstream
• Price competition continues, and production capacity is cleared at an accelerated pace

:

• The cost of SiC devices is expected to drop to the same level as IGBTs
• Installation rate exceeds 50%
• 12-inch wafer technology matures

:

• SiC becomes the mainstream power device for new energy vehicles
• Market scale exceeds USD 10 billion
• Chinese enterprises are expected to enter the global first-tier echelon

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[1] Zhineng Auto - 2025 Market Changes and Domestic Substitution Progress in Silicon Carbide (SiC) and Gallium Nitride (GaN) Fields (https://m.sohu.com/a/977877821_236796)
[2] EEFans - Uncovering the Semiconductor Code of the “Range Revolution” in New Energy Vehicles (https://www.esshow.cn/Document/detail/id/8891.html)
[3] ESM China - Top 10 Market and Application Trends in the Electronics Industry in 2026 (https://www.esmchina.com/news/13691.html)
[4] TrendForce - Power SiC Device Market 2024-2030 Forecast (https://q3.itc.cn/q_70/images03/20260120/7d925ad0d65145328e4d075d839913b4.jpeg)
[5] TrendForce Compound Semiconductors - Recent Industry Dynamics Summary (https://www.eet-china.com/mp/u4063171)
[6] Sina Finance - Top 10 Events of Listed Power Semiconductor Companies in 2025 (https://finance.sina.com.cn/stock/t/2026-01-10/doc-inhfvnnn9422037.shtml)