In-Depth Analysis Report on TSMC's CoWoS Process Technology Roadmap

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January 21, 2026

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Based on comprehensive information collection and analysis, this in-depth research report on TSMC’s CoWoS process technology roadmap is now presented to you.


In-Depth Analysis Report on TSMC’s CoWoS Process Technology Roadmap
I. Overview and Strategic Positioning of CoWoS Technology
1.1 Core Value of CoWoS Technology

CoWoS (Chip-on-Wafer-on-Substrate) is a 2.5D advanced packaging technology launched by TSMC in 2012. Its core value lies in realizing multi-chip heterogeneous integration through a

Silicon Interposer
, vertically integrating logic chips and High-Bandwidth Memory (HBM) within the same package [1]. This technology significantly shortens signal transmission distances between chips, reduces latency, and simultaneously improves bandwidth and energy efficiency ratio, emerging as a key underlying technology supporting high-performance computing in the AI era [2].

As Moore’s Law gradually reaches physical limits in front-end manufacturing, the driving force for semiconductor performance growth has shifted from front-end wafer fabrication to back-end advanced packaging. Against this backdrop, TSMC’s CoWoS technology has evolved from “packaging” to “architecture”, becoming a core solution to break through computing power bottlenecks [1].

1.2 Market Position and Strategic Importance

As of early 2026, TSMC’s CoWoS production lines are nearly fully booked, with premiums for priority production of “hot orders” hitting an all-time high. Securing packaging capacity has become a

key competitive advantage
for tech giants in building next-generation AI infrastructure [3]. NVIDIA has locked in nearly 60% of TSMC’s total CoWoS production capacity for 2026 to support its transition to a 12-month intensive release cycle [3].


II. Comparative Analysis of the Three CoWoS Technology Routes

TSMC’s CoWoS technology has evolved into three main versions, with core differences in

interposer materials and structural design
, each optimized for different application scenarios and cost requirements.

2.1 CoWoS-S (Silicon Interposer)
Technical Indicator Detailed Parameters
Interposer Material
Silicon Interposer + TSV (Through-Silicon Via)
Maximum Package Size
Approx. 2,500 mm² (approx. 3.3x reticle size)
HBM Support Capacity
Up to 8 HBM stacks
Manufacturing Cost
High (uses high-purity silicon material and TSV process)
Technology Maturity
High (mass production achieved)
Typical Applications
NVIDIA H100/H200, AMD MI300

Technical Features:
CoWoS-S is the earliest launched version with the highest maturity. The silicon interposer features extremely high wiring density and excellent electrical properties, capable of providing hundreds to thousands of interconnect lines with low data transmission latency and crosstalk, making it the preferred solution for AI chip packaging [2]. However, due to the fragile nature of silicon material, yield rate is difficult to meet standards when scaling up size, and manufacturing costs are extremely high [4].

2.2 CoWoS-R (Redistribution Layer Based)
Technical Indicator Detailed Parameters
Interposer Material
Redistribution Layer (RDL): Composed of polymer and copper wires
Maximum Package Size
Approx. 2,000 mm²
HBM Support Capacity
Up to 6 HBM stacks
Manufacturing Cost
Low
Technology Maturity
Medium (early production capacity stage)
Typical Applications
Networking equipment, edge AI, custom IPUs

Technical Features:
CoWoS-R uses an RDL interposer to replace the silicon interposer, offering high flexibility to support more diverse chip sizes and configurations [2]. Although its wiring density and conductivity are inferior to those of silicon interposers, it is sufficient for mid-range or specialized computing (such as AI accelerators). This technology can effectively reduce manufacturing costs and shorten integration time [4].

2.3 CoWoS-L (Large Interposer)
Technical Indicator Detailed Parameters
Interposer Material
Local Silicon Interconnect (LSI) + RDL hybrid architecture
Maximum Package Size
Over 3,000 mm² (Gen2 can reach 5.5x reticle size)
HBM Support Capacity
Up to 12 HBM stacks
Manufacturing Cost
Medium (between S and R)
Technology Maturity
High (mass production achieved)
Typical Applications
NVIDIA Blackwell (GB200/GB300), Rubin series

Technical Features:
CoWoS-L is a “massive upgraded version” of CoWoS-S, combining the advantages of both silicon interposers and RDL [2]. Local areas use silicon interposers (LSI) for high-speed chip-to-chip interconnections, while other areas use RDL to provide highly flexible integration capabilities. This technology breaks through the yield bottleneck of large-size silicon interposers while retaining the excellent characteristics of silicon interposers, becoming the
key development direction
of TSMC’s advanced packaging [1].

TSMC CoWoS Technology Roadmap Analysis

Chart Description: The above chart shows the evolution of TSMC’s CoWoS technology, including: (1) Time evolution trend of interposer size and HBM integration quantity; (2) Comparison of core parameters of the three CoWoS technologies; (3) Capacity expansion plan; (4) Key technology milestone timeline.


III. Technology Roadmap and Development Plan
3.1 Short-Term Development Plan (2024-2027)

According to the latest plan from TSMC’s 2025 North America Technology Symposium [5]:

Time Node Technical Specification HBM Integration Target Application
2024
CoWoS-L Gen1 (3.3-4.0x reticle) 8 HBMs NVIDIA Blackwell (B100/B200)
2025
CoWoS-L Gen2 (4.0-4.5x reticle) 12 HBMs NVIDIA GB300
2026
CoWoS-L Gen2 (5.5x reticle) 12 HBMs NVIDIA Rubin
2027
CoWoS-L Gen3 (9.5x reticle) 12+ HBMs NVIDIA Rubin Ultra

Key Technical Breakthroughs:

  • 2027 Mass Production Target:
    Achieve mass production of interposers with a 9.5x reticle size (approx. 12,015 mm²), capable of efficiently integrating 12 or more HBMs with advanced logic chips [1]
  • Customer Launch:
    Rubin Ultra is expected to be the first product to adopt the 9.5x reticle specification [5]
  • Integrated Power Supply Solution:
    Introduce integrated power supply technology into CoWoS to improve power supply density for AI applications [5]
3.2 Mid-to-Long-Term Evolution Roadmap (2028-2030)
3.2.1 CoPoS (Chip-on-Panel-on-Substrate)

TSMC is developing the next-generation

panel-level packaging technology CoPoS
, with core innovation in replacing the circular silicon wafer packaging carrier with a square panel [6]:

Technical Indicator CoWoS (Traditional) CoPoS (Next-Generation)
Packaging Carrier
12-inch circular wafer (300mm) Square panel (310×310mm or larger)
Area Utilization Rate
Approx. 70-75% Approx. 95%+
Number of Chips per Process
16 units (B200) 60+ units
Cost Potential
High 20-30% reduction

Mass Production Timeline:

  • 2026:
    Construct CoPoS pilot production line [1]
  • 2027:
    Focus on process improvements to meet partner requirements [1]
  • Late 2028-Early 2029:
    Achieve mass production [1]
  • Capacity Layout:
    The AP7 factory in Chiayi, Taiwan will become the production center for CoPoS advanced packaging technology [1]
3.2.2 SoW-X (System on Wafer)

TSMC has also launched

SoW-X, a wafer-level system integration technology based on CoWoS
, which uses post-chip process technology and has computing power
over 40 times
that of the CoWoS packaging used in the current Blackwell series [5], with mass production expected in 2027. Cerebras and Tesla Dojo have shown strong interest in this technology.

3.2.3 CoWoP (Chip on Wafer on PCB)

According to reports, NVIDIA is collaborating with TSMC to develop CoWoP packaging technology [4]:

  • Core Technology:
    Eliminate the independent underlying substrate and replace it with high-quality Substrate-like PCB (SLP)
  • Seven Major Improvements:
    Improved signal integrity, enhanced power integrity, improved thermal performance, reduced PCB thermal expansion coefficient, improved electromigration, reduced ASIC costs, support for more flexible chip module integration methods
  • Testing Timeline:
    Functional testing of NVIDIA’s GB100 super chip is expected to be conducted in August 2025 [1]

CoWoS Technology Evolution Analysis

Chart Description: The above chart shows the timeline of CoWoS technology evolution and the applicability matching of different technology versions in various application scenarios.


IV. Capacity Expansion Plan and Supply-Demand Analysis
4.1 Capacity Expansion Roadmap

According to industry analysis data [1]:

Time Node Total Monthly CoWoS Capacity Monthly CoWoS-L Capacity Monthly CoWoS-S Capacity Monthly CoWoS-R Capacity
Q4 2024
35,000 units 10,000-15,000 units 20,000 units Limited
Q4 2025
75,000-80,000 units 45,000 units 20,000 units 10,000 units
Q4 2026
95,000 units 60,000 units 15,000 units 20,000 units
Q4 2027
135,000 units 85,000 units 10,000 units 20,000 units
2028
150,000 units 120,000 units 10,000 units 20,000 units

Capacity Expansion Features:

  • Compound Annual Growth Rate (CAGR) 2022-2026:
    Expected to exceed 50% [4]
  • 2024-2025 Target:
    Capacity growth exceeding 100% [4]
  • 2025-2026 Target:
    Achieve supply-demand balance [4]
  • CoWoS-L Dominance:
    CoWoS-L is expected to account for the main share of future CoWoS series capacity [1]
4.2 Geographic Layout of Capacity Expansion

TSMC is accelerating the global layout of advanced packaging capacity [1]:

Factory/Facility Location Expected Timeline Focused Technology
Zhunan AP6B Plant
Taiwan Monthly capacity reaches 33,000 units in Q3 2024 Fully automated 3DFabric factory
Taichung AP5B Plant
Taiwan Operational in H1 2025 Mainly CoWoS, with partial SoIC capacity
Chiayi Science Park Packaging Plant
Taiwan Completed and equipped in Q3 2025 CoWoS, mass production in 2028
Innolink Nanke AP8 Plant
Taiwan Pilot production in H2 2025 CoWoS
Kaohsiung K28 Plant
Taiwan Completed in 2026 CoWoS capacity
Arizona Plant, USA
USA In planning CoPoS advanced packaging
4.3 Supply-Demand Pattern Analysis

Demand-Side Driving Factors:

  • Sustained increase in demand for high-bandwidth packaging for AI training and inference chips [1]
  • Major customers such as NVIDIA and AMD continue to launch next-generation AI chips [2]
  • Growing demand for self-developed AI chips by major tech companies (e.g., Google TPU, AWS Trainium) [3]

Supply-Side Constraints:

  • CoWoS process involves stacking and connecting high-value components such as HBM, making yield control a core challenge [1]
  • Long construction cycle and large equipment investment for advanced packaging capacity [3]
  • Limited talent and supply chain resources [5]

V. Technical Challenges and Solutions
5.1 Core Challenges
5.1.1 Yield Control Challenges

As package size and density increase, thermal management and package mechanical stability have become design bottlenecks [2]:

  • Multiple reticle stitching is used to manufacture larger-size silicon interposers, but yield control becomes more difficult [1]
  • Large-size silicon interposers lead to yield reduction issues [1]
  • Hybrid bonding has extremely high requirements for cleanroom environments, comparable to front-end wafer manufacturing [3]
5.1.2 Cost Challenges
  • R&D and factory construction costs for each new process generation grow exponentially [2]
  • Long payback period for advanced packaging equipment investment [3]
  • Although CoWoS-L has lower costs than CoWoS-S, it is still more expensive than traditional packaging [4]
5.1.3 Technology Integration Challenges
  • Integration of the 6th-generation HBM4 increases technical complexity, requiring extremely high vertical and horizontal interconnect density [3]
  • Highly sensitive to thermal deformation during the bonding process [3]
  • Packaging is no longer a traditional back-end process, but an integral part of the computing engine [3]
5.2 Solution Paths
5.2.1 Technology Route Selection
Challenge Type Solution
Large-size Interposer Yield Switch to CoWoS-L, adopting LSI+RDL hybrid architecture [1]
Cost Optimization Develop CoWoS-R for mid-range applications [4]
Panel-Level Expansion Develop CoPoS technology to improve area utilization [6]
Thermal Management Issues Explore silicon carbide interposer alternatives [4]
5.2.2 Industrial Collaboration Model

CoWoS has formed two main collaboration frameworks [1]:

  1. “TSMC + Third-Party OSAT” Model:
    TSMC completes interposer and stack interconnection (CoW), while packaging (on Substrate) is completed by OSATs such as ASE Group
  2. “Third-Party Wafer Fab + OSAT” Model:
    UMC and GlobalFoundries provide interposers, while packaging is completed by ASE Group, Amkor, etc.
5.2.3 Yield Improvement Measures
  • Introduce advanced reticle stitching technology [2]
  • Develop new processes for large-size wafer handling [2]
  • Explore panel-level packaging to improve yield [5]
  • Strengthen full-process quality control system [1]

VI. Customer Applications and Product Roadmap
6.1 Corresponding Relationship Between Major Customers and Products
Customer Product Series Adopted Technology Mass Production Time
NVIDIA
Hopper (H100/H200) CoWoS-S 2023-2024
NVIDIA
Blackwell (B100/B200) CoWoS-L Gen1 Q4 2024
NVIDIA
GB200 CoWoS-L Gen1 2025
NVIDIA
Rubin CoWoS-L Gen2 2026
NVIDIA
Rubin Ultra CoWoS-L Gen3 2027
AMD
MI300 Series CoWoS-S 2024
AMD
MI5XX CoWoS-L Gen3 + A16 2027
Google
TPU CoWoS-S/R Ongoing
Amazon
Trainium/Inferentia CoWoS-S/R Ongoing
6.2 Technology Evolution and Performance Improvement

From Hopper to Blackwell to Rubin, NVIDIA GPU performance has continued to improve significantly [1]:

Generation Process Technology Packaging Technology Core Improvements
Hopper (H100)
4nm CoWoS-S Introduced Transformer Engine
Blackwell (B200)
4nm CoWoS-L Dual-GPU architecture, 8 HBM3e
Rubin
3nm CoWoS-L Gen2 12 HBM4, new architecture
Rubin Ultra
3nm/2nm CoWoS-L Gen3 9.5x reticle, 12+ HBM4e

VII. Competitive Landscape and Industrial Impact
7.1 Global Advanced Packaging Competitive Landscape

Currently, only a few manufacturers such as TSMC, Samsung, and Intel possess

full-stack CoWoS capabilities
covering advanced logic chip manufacturing, interposer processing, and packaging integration [1].

Manufacturer Technical Capability Market Position
TSMC
Full range of CoWoS-S/R/L, SoIC, CoPoS under development Dominant position (main supplier of AI chips)
Samsung
CoWoS-like solutions Catching up
Intel
Advanced packaging such as Foveros, EMIB Actively deploying
ASE Group (OSAT)
Advanced packaging back-end processes Key partner
7.2 Industrial Impact Analysis

Impact on Semiconductor Industry Chain:

  • Shift in Equipment Investment Focus:
    From front-end manufacturing to advanced packaging [6]
  • Increased Value of Packaging and Testing:
    The value of advanced packaging shifts from 70% in front-end to back-end [1]
  • Supply Chain Restructuring:
    Industrial collaboration model shifts from vertical integration to precise collaboration [1]

Impact on Terminal Market:

  • Continuous Breakthroughs in AI Computing Power:
    Supports training of trillion-parameter AI models such as GPT-5 [2]
  • Improved Energy Efficiency in Data Centers:
    Advanced packaging reduces power consumption and latency [3]
  • Expected Cost Reduction:
    Technologies such as CoPoS are expected to reduce unit computing power costs [6]

VIII. Future Outlook and Investment Implications
8.1 Technology Development Trends
  1. Continuous Expansion of Package Size:
    Evolve from 3.3x to 9.5x and even larger sizes
  2. Increased HBM Integration:
    Develop from 8 stacks to 12 stacks and more
  3. Introduction of New Materials:
    Exploration of new materials such as silicon carbide interposers and glass substrates
  4. Deepened Heterogeneous Integration:
    Multi-functional integration such as photonic integration and power supply integration
8.2 Industrial Development Forecast
Time Node Expected Milestones
2025
CoWoS-L becomes the mainstream technology, and supply-demand balance for capacity is achieved
2026
CoPoS pilot production, 5.5x reticle mass production
2027
9.5x reticle mass production, SoW-X begins production
2028
CoPoS mass production, panel-level packaging becomes a new battlefield
2030
8-10x reticle target achieved
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Insights are generated using AI models and historical data for informational purposes only. They do not constitute investment advice or recommendations. Past performance is not indicative of future results.